Performance Simulation of Nanoscale Silicon Rod Field-Effect Transistor Logic
نویسندگان
چکیده
We have simulated the behavior of a rod shaped nanoscale ring-gated field-effect transistor (RGFET) using the PISCES-IIb[1] semiconductor driftdiffusion solver. The results from these simulations are used by a customized SPICE 3f5[2] kernel to simulate several simple logic gates. The usefulness of this kind of transistor is examined within the context of a selfassembling fabrication technique that we outline. Our simulation results, SPICE kernel modifications, and input decks may be found at ftp://ftp.cs.unc.edu/pub/packages/GRIP/publication_adden da/TSNSRFET.
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